UV detectors are used in research, industry, military applications, and security systems. A photodetector is the fundamental element of every radiation sensor and determines its basic parameters. This article presents research on the dependence of the characteristics of SiC-based UV detectors on long-term annealing at elevated temperatures.The basic design parameter describing the properties of a photodetector is its spectral sensitivity. A parameter that allows for the objective comparison of detectors is the normalized spectral detectivity, which takes into account the noise limiting the detector’s capabilities. The NEP (noise equivalent power) parameter is often used, which is the reciprocal of detectivity (without normalization with respect to bandwidth and area). Photonic optical radiation detectors exhibit a selective dependence of sensitivity on the wavelength of incident radiation and, compared to thermal detectors, are characterized by higher detectivity and faster response speeds.
Semiconductor photodetectors [1][2] for the UV, VIS, and IR radiation ranges are used in almost all areas of life: industry, automation, applications (…)
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Source: Logistyka Magazine
Temperature studies of silicon carbide UV photodetectors – PDF file for download